Planar channeling radiation by relativistic electrons in different structures of silicon carbide

Spectral distributions of channelling radiation by relativistic electrons in different planes of different types of polytype silicon carbide crystals such as hexagonal, zincblende, and rombohedral are presented. For every structure we have found the planes from which channeling radiation of relativistic electrons is possible. Using Doyle-Turner approximation to the atomic scattering factor and taking in to account thermal vibrations of atoms, the continuum potentials for different planes of different structure of polytype SiC single crystal were calculated. In the frame of quantum mechanic, the theory of channeling radiation has been applied to calculate the transverse electron states in the continuum potential of the planes and to study transition energies, linewidths, depth dependence for population of quantum states and spectral radiation distributions. At electron energies higher than 100 MeV the spectral distributions of radiation are calculated by classical calculations. The trajectories, velocities and accelerations of electrons are obtained and in the frame of classical electrodynamics. The spectral-angular distribution of radiation has been calculated using real trajectories, velocities and acceleration of electrons. Specific properties of planar channeling radiation in different structures of SiC are discussed.