High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Wang, X.; Liu, S.; Ma, N.; Feng, L.; Chen, G.; Xu, F.; Tang, N.; Huang, S.; Chen, K. J.; Zhou, S.; Shen, B.
A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm^2 V^-1 s^-1 and a residual electron concentration of 1.47×10^17 cm^-3 at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16529) publication
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Applied Physics Express 5(2012), 015502
DOI: 10.1143/APEX.5.015502
Cited 97 times in Scopus -
Communication & Media Relations
News release at Semiconductor Today 30.01.2012
Permalink: https://www.hzdr.de/publications/Publ-16529