Effect of the processing of embedded Ge nanocrystals upon the Si-SiO2 interface state and border trap density
Effect of the processing of embedded Ge nanocrystals upon the Si-SiO2 interface state and border trap density
Beyer, R.; Burghardt, H.; von Borany, J.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16697) publication
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Lecture (Conference)
14th European Conference on Applications of Surface and Interface Analysis (ECASIA'11), 05.09.2011, Cardiff, Wales
Permalink: https://www.hzdr.de/publications/Publ-16697