Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron X-ray diffraction

Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron X-ray diffraction

Eichhorn, F.; Schell, N.; Matz, W.; Kögler, R.

• J. Appl. Phys.Vol. 86 No. 8 (1999) 4184 - 4187
  DOI: 10.1063/1.371344
  Cited 15 times in Scopus

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