Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films
Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films
Xu, Q.; Wen, Z.; Shuai, Y.; Wu, D.; Zhou, S.; Schmidt, H.
We report the forming-free unipolar resistive switching effects in polycrystalline BiFe0.95Co0.05O3 films which were spin-coated on ITO/glass substrates by a chemical solution deposition method. The resistive ratio of the high resistive state (HRS) to the low resistive state (LRS) is more than 2 orders of magnitude. The conduction of the HRS is dominated by the space-charge-limited conduction mechanism, while Ohmic behavior dominates the LRS, which suggests a filamentary conduction mechanism. The oxygen vacancies are considered to play an important role in forming the conducting filaments.
Keywords: Unipolar resistive switching; Multiferroics; Chemical deposition
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Journal of Superconductivity and Novel Magnetism 25(2012)6, 1679-1682
Online First (2012) DOI: 10.1007/s10948-012-1499-z
Cited 2 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17100