Improvement of CIGS layer quality by Flash Lamp Annealing

Copper Indium Gallium diselenide (CIGS) become more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing (FLA) on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that FLA reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the not annealed sample. Moreover, after FLA the degradation of the photoluminescence is significantly suppressed.