Flash lamp processing of III/V nanostructures in silicon

Conventionally, the integration of III-V semiconductors with silicon is based on heteroepitaxial growth of multi-layered structures on silicon. But up to now the modification of the optoelectronic properties of silicon in the microelectronic industry is based on the ion implantation method and subsequent thermal annealing. An alternative technique to the epitaxial growth of III-V nanostructures is the high fluence ion implantation followed by milliseconds range annealing. Potentially, with this method any kind of compound semiconductors can be formed in any solid substrate. InP and GaAs with a bulk band gap of 1.34 and 1.42 eV at room temperature, respectively, are most suitable for near infrared light emitters, and InAs (0.35 eV) with an extremely high electron mobility (up to 40000 cm2/Vs) seems to be the most suitable candidate for better electronic devices performance. In this paper formation of the InAs, GaAs and InP nanocrystals in silicon are presented. The optoelectronic and microstructural properties of the compound semiconductors nanostructures were investigated by means of -Raman and temperature dependent photoluminescence spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectroscopy (EDS). It is show that conductivity type, size and crystallographic orientation of the III-V nanostructures can be fully controlled by varying implantation and annealing parameters. Finally the heterojunction devices consisting of III-V NCs on a silicon finger realized by selective etching of silicon will be presented.