Diffusive racetrack oxidation in a Ti sputter target by reactive high power impulse magnetron sputtering

This paper reports experimental results for near-surface Ti sputter target oxidation in a magnetron racetrack during reactive high power impulse magnetron sputtering (HIPIMS) at various optical plasma monitoring set-points in the transition region between ‘metal’ and ‘poisoned’ target states. Oxygen depth profiles were obtained by nuclear reaction analysis and glow discharge optical emission spectroscopy. Ti target surface oxidation depth as induced by reactive HIPIMS was found to depend on the process set-point as well as discharge conditions. Deepest oxidation was observed when operating close to ‘fully poisoned (FP)’ or in ‘FP’ regime with oxygen profiles extending as deep as ∼0.5μm (oxygen concentration >=5 at%). Oxygen profiles obtained indicate the occurrence of oxygen bulk diffusion. Process induced elevated target surface temperature, magnetic field and plasma assistance are suggested to contribute substantially to these profiles. Based on these findings it is proposed that ion-bombardment-assisted thermal diffusion is a third target poisoning mechanism that can be taking place and is therefore important in reactive HIPIMS in addition to the two currently accepted mechanisms—ion implantation and chemisorption. Under the conditions investigated in this work, diffusive oxidation was most significant when operating in the lower part of the hysteresis loop. Reactive HIPIMS processes that will facilitate significant diffusive sputter target surface oxidation will also be expected to exhibit wider hysteresis and longer target cleaning times after substantial target poisoning.