On-chip superconductivity above 7 K in microstructured 10 nm thin Ga films embedded in Si wafers

Initiated by the finding of doping-induced ambient-pressure superconductivity in classic group-IV semiconductors, in particular our investigation on Ga-doped Germanium [1], we have succeeded in preparing an even more promising candidate for superconducting onchip application [2]. Ion implantation has been utilized to introduce a high dose of Ga into silicon wafers capped by 30 nm SiO2. Ga segregation underneath the cover was stimulated by subsequent rapid thermal annealing in a narrow time and temperature window. Extended structural investigations by means of XTEM, EDX, RBS/C, and SIMS confirm a reproducible formation of 10 nm thin amorphous Ga-rich layers. In the normal state these layers reveal a sheet resistance with a negative temperature derivative and an absolute value close to the quantum resistance which is about 6 kOhm. The superconducting onset temperature accounts for up to 10 K while a zero-resistance state coincides with diamagnetic screening below 5 K verified by means of resistivity and dc magnetization measurements. Further, superconductivity remains stable up to remarkable high magnetic fields of more than 8 Tesla and exhibits a distinct critical-field anisotropy manifesting its thin-film character. Homogeneity and scale-independent behavior down to 3 micron have been proven by lateral microstructuring via photolithography rendering critical-current densities higher than 50 kA/cm². Recently, focussed-ion beam technique has been implemented in order to create Josephson junctions - key elements of the prospective first ever built gallium SQUID.