Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers
Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers
Deßmann, N.; Pavlov, S. G.; Shastin, V. N.; Zhukavin, R. K.; Winnerl, S.; Mittendorff, M.; Hübers, H.-W.
The capture of free holes and electrons in germanium (Ge) doped by gallium (Ga) or antimony (Sb) has been studied by a time-resolved pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. For Ga acceptors the relaxation times decrease with increasing pump power from approximately 3 ns to 1 ns (2 ns and 1 ns for Sb donors, respectively). The results support the development of fast photoconductive detectors in the terahertz region of the spectrum.
Keywords: Time resolved spectroscopy; THz; shallow donors in Ge
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 17976) publication
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Contribution to proceedings
37th International Conference on Infrared, Millimeter and Terahertz Waves, 23.-28.09.2012, Wollogon, Australia
Proceedings of the IEEE 37th International Conference on Infrared, Millimeter and Terahertz Waves, ID:2569425 -
Poster
37th International Conference on Infrared, Millimeter and Terahertz Waves, 23.-28.09.2012, Wollogon, Australia
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