Epitaxial aluminum carbide formation in 6H-SiC by high dose Al+ implantation
Epitaxial aluminum carbide formation in 6H-SiC by high dose Al+ implantation
Stoemenos, J.; Pecz, B.; Heera, V.
Aluminum carbide precipitates are formed after Al ion implantation with dose 3x1017 cm-2 at 500°C into single crystalline 6H SiC. The aluminum carbide (Al4C3) precipitates are in epitaxial relation with 6H-SiC matrix, having the following orientation relation, [0001]6H-SiC//[11-20]Al4C3 and [11-20]6H-SiC//[11-20]Al4C3 , as transmission electron microscopy reveals. The aluminum carbide appears around the maximum of the Al depth distribution. Si precipitates were also detected in the same zone.
Keywords: high dose implantation; silicon carbide; phase formation
- Applied Physics Letters 74 (1999) 2602
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