A novel method to investigate ion-beam-induced defect evolution in Si

Posselt, M.

Invited lecture (Conferences)
5th International Symposium on Process Physics and Modeling in Semiconductor Device Manufacturing, 195th Meeting of the Electrochemical Society, Seattle, WA, USA, May 2-6, 1999 (invited lecture)
Book (Authorship)
pp. 58-74 in: Process Physics and Modeling in Semiconductor Technology (Edited by C. S. Murthy, G. R. Srinivasan, S. T. Dunham), Proceedings Volume 99-1, The Electrochemical Society, Pennington, NJ

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