Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
Pinto, S. R. C.; Buljan, M.; Marques, L.; Martin-Sanchez, J.; Conde, O.; Chahboun, A.; Ramos, A. R.; Barradas, N. P.; Alves, E.; Bernstorff, S.; Grenzer, J.; Muecklich, A.; Ramos, M. M. D.; Gomes, M. J. M.
In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.
Keywords: MEMORY; NANOCRYSTALS; SCATTERING; OXIDES; LAYERS
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- Rossendorf Beamline at ESRF DOI: 10.1107/S1600577520014265
Related publications
- DOI: 10.1107/S1600577520014265 is cited by this (Id 18213) publication
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 18213) publication
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Nanotechnology 23(2012), 405605
DOI: 10.1088/0957-4484/23/40/405605
Cited 10 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-18213