Crystallization of the high-dose hydrogen ion implanted silicon-on-insulator layers under millisecond pulse annealing

Crystallization of the silicon-on-insulator films implanted with high dose of hydrogen ions was investigated under pulse millisecond annealing. Three-phase structure, consisted of the silicon nanocrystals, amorphous silicon, and hydrogen bubbles, was observed from the as-implanted samples. It was shown that the nanocrystal structure of the films is remained under pulse annealing up to 1000◦C. As pulse annealing temperature was increased, the nanocrystal diameter incrased from 2 to 5 nm, and the naoncrystal fraction rose to 70%. From the analysis of the crystalline-phase growth activation energy, it was speculated about the atomic hydrogen diffusion as limiting factor of the crystallization of the highly-hydrogenated ( 50 at%) silicon films.