Contactless Control of Nonlinear Flow Phenomena in the Czochralski Crystal Growth of Silicon by Use of Magnetic Fields

Control of melt motions is important for most of the crystal growth technologies in order to improve the crystal quality and the yield. There were several attempts in the past to use steady magnetic fields for a damping of instabilities. Much more possibilities for flow control exist if unsteady magnetic fields are used, preferably in combination with steady fields. This new active melt control is attractive for industrial use. Principal mechanisms of this type of flow control are presented in this lecture, particularly adressed to the needs of the Si-Cz-technology. The research project is developed together with the institute of physics Riga and Wacker Chemitronics Ltd. Burghausen