InGaAs-based Large Area Photoconductive Emitters For 1.55 µm Excitation

InGaAs-based Large Area Photoconductive Emitters For 1.55 µm Excitation

Xu, M.; Mittendorff, M.; Dietz, R.; Göbel, T.; Schneider, H.; Helm, M.; Winnerl, S.

We present a scalable large-area terahertz (THz) emitter designed for excitation with 1.55 µm pump radiation. It is based on an InGaAs heterostructure combined with a microstructured electrode pattern. Electric fields of more than 2.5 V/cm in the THz focus are reached, the spectrum of the pulses extends up to 3 THz.

Keywords: photoconductive THz emitter; 1.55 µm excitation; InGaAs-based THz emitter

  • Poster
    38th International Conference on Infrared, Millimeter and Terahertz Waves, 01.-06.09.2013, Mainz, Deutschland
  • Contribution to proceedings
    38th International Conference on Infrared, Millimeter and Terahertz Waves, 01.-06.09.2013, Mainz, Deutschland
    DOI: 10.1109/IRMMW-THz.2013.6665436

Permalink: https://www.hzdr.de/publications/Publ-18891