Fast relaxation of free carriers in compensated n- and p-type germanium

Fast relaxation of free carriers in compensated n- and p-type germanium

Deßmann, N.; Pavlov, S.; Mittendorff, M.; Winnerl, S.; Zhukavin, R.; Tsyplenkov, V.; Shengurov, V.; Shastin, V.; Abrosimov, N.; Riemann, H.; Hübers, H.-W.

The relaxation of free holes and electrons in compensated germanium doped by gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20-300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained results for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range.

Keywords: Time resolved spectroscopy; THz

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Related publications

  • Lecture (Conference)
    38th International Conference on Infrared, Millimeter and Terahertz Waves, 01.-06.09.2013, Mainz, Deutschland
  • Contribution to proceedings
    38th International Conference on Infrared, Millimeter and Terahertz Waves, 01.-06.09.2013, Mainz, Deutschland
    DOI: 10.1109/IRMMW-THz.2013.6665867

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