Infrared ellipsometry for improved laterally resolved analysis of thin films

In the present article we discuss developments towards increasing the spatial resolution of infrared ellipsometry and ellipsometric microscopy for the study of thin films. Relevant aspects in the interpretation of observed peaks in the infrared (ellipsometric) spectra are discussed. In particular anisotropic effects in dependence of molecular orientations in organic films and the excitation of a macroscopic wave, the Berreman mode, in thin silicon oxide films are addressed. For correct interpretation of measured data optical simulations are essential to avoid incorrect conclusions on band frequency and assignments.