Buried (fe 2-x Co x) Si2 layers with variable band gap formed in silicon by ion beam synthesis (IBS)

Buried (fe 2-x Co x) Si2 layers with variable band gap formed in silicon by ion beam synthesis (IBS)

Panknin, D.; Wieser, E.; Skorupa, W.; Henrion, W.; Lange, H.

• Journal of Applied Physics A 62 (1996), 155

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