Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Berencen, Y.; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramirez, J. M.; Rodriguez, J. A.; Skorupa, W.; Garrido, B.
Abstract
High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2E-14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.
Keywords: electroluminescence; MOS devices; Terbium; Si-rich nitride
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 19195) publication
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Applied Physics Letters 103(2013), 111102
DOI: 10.1063/1.4820836
Cited 33 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-19195