The 6 MV tandem accelerator and its applications at HZDR


The 6 MV tandem accelerator and its applications at HZDR

Akhmadaliev, S.; Heller, R.; Munnik, F.; Neelmeijer, C.; Abrasonis, G.; Rugel, G.; Pavetich, S.; Ziegenrücker, R.; Renno, A. D.; Merchel, S.; Kolitsch, A.; von Borany, J.

The 6 MV tandem accelerator system at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) is dedicated for non-destructive spatial- and depth-resolved analysis using ion beam techniques as well as for material modification via high-energy ion implantation and for accelerator mass spectrometry (AMS) [1].
The accelerator is a medium current 6 MV TandetronTM (HVEE) operating at terminal voltages of 0.3 – 6 MV with high energy stability. Originally, the accelerator was equipped with two separate ion injection systems only: a) the multipurpose ion injector (MPI) for ion beam analysis and high-energy ion implantation; b) the bouncer injector with two Cs-sputter ion sources is exclusively used for AMS purposes. For more flexibility an additional injection system including two gas ion sources, one for He and one for 15N ions, is actually under construction.
The AMS system (DREAMS) is applied for measurements of radionuclides like 10Be, 26Al, 36Cl, 41Ca, and 129I with ultimate sen¬sitivity. One of the original AMS ion sources was modified improve AMS performance for 36Cl and 129I measurements.
The existing IBA equipment is used for RBS, ERD (including high resolution ERD), PIXE/PIGE, NRA and IBA with an external proton beam. A newly installed high-speed PIXE system allows to provide fast spatial-resolved measurements using an X-ray camera. The cluster tool system combines surface analysis using IBA methods with thin film deposition and modification techniques in one tool.
High-energy ion implantation or irradiations can be performed at two different end-stations. One of them is equipped with an automatic wafer-handling system allowing irradiation of samples with a size up to 20 cm  20 cm, which is routinely applied for industrial services.

Keywords: Ion accelerator; ion beam analysis; AMS; IBA; ion implantation

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