Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources
Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources
Weatherup, R. S.; Baehtz, C.; Dlubak, B.; Bayer, B. C.; Kidambi, P. R.; Blume, R.; Schloegl, R.; Hofmann, S.
Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.
Keywords: Graphene; solid carbon; low temperature; diffusion barrier; in situ; XPS; XRD
Involved research facilities
- Rossendorf Beamline at ESRF DOI: 10.1107/S1600577520014265
Related publications
- DOI: 10.1107/S1600577520014265 is cited by this (Id 19566) publication
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Nano Letters 13(2013), 4624-4631
Online First (2013) DOI: 10.1021/nl401601x
Cited 106 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-19566