Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation
Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation
Putero, M.; Coulet, M.-V.; Ouled-Khachroum, T.; Muller, C.; Baehtz, C.; Raoux, S.
The crystallization of stoichiometric GaSb thin films was studied by combined in situ synchrotron techniques and static laser testing. It is demonstrated that upon crystallization, GaSb thin films exhibit an unusual behaviour with increasing thickness and concomitant decreasing mass density while its electrical resistance drops as commonly observed in phase change materials. Furthermore, beyond GaSb amorphous-to-crystalline phase transition, an elemental segregation and a separate crystallization of a pure Sb phase is evidenced.
Keywords: PCRAM; XRD; XRR; synchrotron
Involved research facilities
- Rossendorf Beamline at ESRF DOI: 10.1107/S1600577520014265
Related publications
- DOI: 10.1107/S1600577520014265 is cited by this (Id 19568) publication
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Applied Physics Letters 103(2013), 2319121-2319125
Online First (2013) DOI: 10.1063/1.4842175
Cited 24 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-19568