Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band


Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band

Teich, M.; Stephan, D. R.; Winnerl, S.; Schneider, H.; Wilson, L. R.; Helm, M.

Using transient four-wave mixing in the terahertz range, we have measured the s-p inter-sublevel dephasing time in self-assembled InAs/GaAs quantum dots for transition energies below the Reststrahlen band. Dephasing times of up to 600 ps at a photon energy of 18 meV have been determined. By comparing pump-probe and four-wave mixing measurements, we show that there is no significant influence of any pure dephasing process at low temperature. The linear temperature dependence is consistent with acoustic phonon scattering.

Keywords: quantum dots; THz; FEL; dephasing

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