Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band
Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band
Teich, M.; Stephan, D. R.; Winnerl, S.; Schneider, H.; Wilson, L. R.; Helm, M.
Using transient four-wave mixing in the terahertz range, we have measured the s-p inter-sublevel dephasing time in self-assembled InAs/GaAs quantum dots for transition energies below the Reststrahlen band. Dephasing times of up to 600 ps at a photon energy of 18 meV have been determined. By comparing pump-probe and four-wave mixing measurements, we show that there is no significant influence of any pure dephasing process at low temperature. The linear temperature dependence is consistent with acoustic phonon scattering.
Keywords: quantum dots; THz; FEL; dephasing
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 19755) publication
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Applied Physics Letters 103(2013), 252110
DOI: 10.1063/1.4857515
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-19755