Memory Effects in Resistive Ion-beam Modified Oxides

The Virtual Institute MEMRIOX establishes a joint research initiative in the field of ion-tailored oxide-based memristive elements, to be pursued within a novel and unique combination of core competences from the Helmholtz centers Dresden-Rossendorf and Jülich and their university partners in Dresden, Freiberg, Jena, San Diego, and Zürich.
A nanoscale memristive element may prove the concept of the ultimate future non-volatile memory cell with a resistance set directly by electric currents. The Virtual Institute aims at stepping beyond the established layer-by-layer control of intrinsic defects during the synthesis of memristive elements. The project is financed by the Initiative and Networking Funds of the Helmholtz Association (VH-VI-442).