Disentangling defect-induced ferromagnetism in SiC
Disentangling defect-induced ferromagnetism in SiC
Wang, Y.; Li, L.; Prucnal, S.; Chen, X.; Tong, W.; Yang, Z.; Munnik, F.; Potzger, K.; Skorupa, W.; Gemming, S.; Helm, M.; Zhou, S.
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain the magnetic properties as a result of the intrinsic clustering tendency of defects.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 19857) publication
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Physical Review B 89(2014), 014417
DOI: 10.1103/PhysRevB.89.014417
Cited 33 times in Scopus
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