Synthesis and characterization of MnAs and MnP nanoclusters embedded in III–V semiconductors

We report on a systematic study of the synthesis and magnetism of hybrid ferromagnetic semiconductors comprised of MnAs and MnP nanoclusters embedded in GaAs and InP matrices, respectively. Samples were prepared by Mn-ion implantation followed by millisecond-range flash lamp annealing. X-ray diffraction and Auger electron spectroscopy results confirm the formation of MnAs nanoclusters of sizes 150 ± 50 nm. Ferromagnetic properties of MnAs: GaAs (MnP:InP) hybrid systems are studied by magnetic force microscopy and superconducting quantum interference device magnetometry. We show that the magnetization at saturation and the ferromagnetic transition temperature Tc, of MnAs:GaAs depend on the Mn-concentration and on the annealing energy density. While in the case of MnP:InP they are independent of the annealing energy density used. Ferromagnetism in such hybrid systems (ferromagnet–semiconductor) above 300 K makes them very attractive for applications in spintronic devices.