Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation
Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation
Luan, Q.; Jia, Y.; Wang, Y.; Akhmadaliev, S.; Zhou, S.; de Aldana, J.; Tan, Y.; Chen, F.
Optical ridge waveguides were fabricated in 4H-SiC single crystal by combination of 15 MeV C5+ ion irradiation and femtosecond laser ablation. The near-field modal intensity distributions exhibit the well-confined light propagation in the waveguides. A propagation loss as low as 5.1 dB/cm has been achieved at 632.8 nm for the ridge waveguide. The investigation of confocal micro-Raman spectra suggests partial transition of 4H-SiC to 6H-SiC in the irradiated region.
Keywords: Waveguides; SiC; Ion irradiation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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Permalink: https://www.hzdr.de/publications/Publ-20382