Ion beam synthesis by tungsten implantation into 6H-silicon carbide at elevated temperatures

Ion beam synthesis by tungsten implantation into 6H-silicon carbide at elevated temperatures

Weishart, H.; Matz, W.; Skorupa, W.

Involved research facilities

• Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

• DOI: 10.17815/jlsrf-3-159 is cited by this (Id 20419) publication

• Contribution to proceedings
  1995 MRS Fall Meeting & Exhibit, 27.11.-1.12.1995, Massachusetts, USA
  MRS Symposium Proceedings Series: III-Nitride, SiC, and Diamond Materials for Electronic Devices: Cambridge University Press, 9781558993266, 195-200

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