Ferromagnetism and structural defects in V-doped titanium dioxide
Ferromagnetism and structural defects in V-doped titanium dioxide
Yildirim, O.; Butterling, M.; Cornelius, S.; Mikhailovskiy, Y.; Novikov, A.; Semisalova, A.; Orlov, A.; Gan’Shina, E.; Perov, N.; Anwand, W.; Wagner, A.; Potzger, K.; Granovsky, A. B.; Smekhova, A.
We report recent experimental results about influence of negatively charged structural defects on room-temperature ferromagnetism in V-doped TiO2-δ thin films with different electric conductivities. Films were prepared on LaAlO3 (001) substrates by RF magnetron sputtering in reduced argon-oxygen atmosphere, while the V to Ti metal ratio was fixed at 1 at.%. The ferromagnetic order at room temperature (RT) was confirmed by SQUID magnetometry. Positron annihilation spectroscopy (PAS) was applied to check the presence of open-volume defects in the TiO2-δ matrix. The relation between ferromagnetic properties and amount of negatively charged defects in the studied films was established. The collection of structural, magnetometry, magnetotransport, magneto-optic and PAS data hints towards the defect-induced model of ferromagnetism in1 at.% V-doped TiO2-δ thin films.
Keywords: diluted magnetic semiconductors; defect-induced ferromagnetism; doped TiO2; PAS
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- P-ELBE
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- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 20499) publication
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Physica Status Solidi (C) 11(2014)5-6, 1106-1109
DOI: 10.1002/pssc.201300722
Cited 5 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-20499