Defects and localized states in silica layers implanted with lead ions
Defects and localized states in silica layers implanted with lead ions
Zatsepin, A. F.; Fitting, H.-J.; Buntov, E. A.; Pustovarov, V. A.; Schmidt, B.
The luminescence of silica films and glasses implanted with Pb+ ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal- dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb2+ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO2 matrix and (2) localized electronic states (LS) of the amorphous lead-silicate phase
Keywords: Lead ion implantation; Metal-dielectric composites; Photoluminescence excitation; Silica; UV-vis-photoluminescence
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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DOI: 10.1016/j.jlumin.2014.05.031
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-20584