In-situ observation of electron-beam induced ripening of Ge clusters in thin SiO2 layers

A TEM technique was employed for the in-situ observation the Ge-clusters ripening process. Subsequent irradiation with electron beams of 200kV and 300kV acceleration energy lead to formation of a nanocluster band in the middle of thermally grown SiO2 thin layer implanted with Ge+. A number of micrographs taken during the ripening show the detailed information about process. The velocity of ripening can be controlled by changing of the irradiation intensity. The performed experiments pointed that ripening take place even for sample temperatures far below 1000K the activation threshold of thermal processes.