Single-Crystalline CoSi₂ Layer Formation by Focused Ion Beam Synthesis

The effects of accumulated radiation damage which arise from the excessive current density employed
during focused ion beam implantation are described. The dwell time during beam scanning significantly
influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage,
single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is
described which enables the reduction of radiation damage induced by a focused ion beam to the level of
conventional ion implantation. This is of importance for the formation of single-crystalline CoSi2 layers.