Phase formation after high dose aluminium implantation into silicon carbide

High doses of 350 keV Al+ ions were implanted into 6H-SiC single crystals at 500oC. The phase formation was studied by TEM, SIMS and AES. A critical Al concentration of about 10 at% was found below that the 6H-SiC structure remains stable. The Al atoms
occupy preferentially Si sites in the SiC lattice. The replaced Si atoms seem to be mobile under the given implantation conditions and diffuse out. At higher Al concentrations the SiC matrix is decomposed and precipitates of Si and Al4C3 are formed.
It was found that the Al4C3 precipitates have a perfect epitaxial orientation to the SiC matrix. The phase transformation is accompanied by atomic redistribution and strong volume swelling. The resulting changes in the atomic profiles can be accounted
for by a simple chemical reaction model.