Adjusting the Forming Step for Resistive Switching in Nb2O5 by Ion Irradiation

Resistive switching devices with Nb2O5 as a switching layer are treated with argon ion irradiation, which generates defects in the oxide layer that support the electroforming step. To distinguish between the effects of layer thinning by sputtering and that of defect generation, devices with different thicknesses of deposited oxide are investigated. It is found that the defect-rich interfaces allow the formation of thick oxides at low forming voltages, and therefore, the effects of the ion irradiation are comparable to the use of reactive electrodes.