Ferromagnetic InMnAs prepared by Ion implantation and pulsed laser annealing

Ferromagnetic InMnAs has been previously prepared by low temperature MBE. In this contribution, we present an alternative method what combines Mn ion implantation and pulsed laser annealing to achieve In1-xMnxAs (x = 0.04 and 0.08) [1], and to obtain a remarkably high Curie Temperature (TC) up to 80 K compared to InMnAs with the same Mn concentration as prepared by MBE. The advantage of pulsed laser annealing is its high process temperature within the nano-second range, eliminating n-type defects which can decrease its magnetization and TC. The saturation magnetization is ~2.6μB / Mn by consideration of all implanted Mn ions. The out-of-plane [001] is the easy axis displaying a nearly square like hysteresis loop. Our results suggest that InMnAs prepared by ion implantation and pulsed laser annealing shows a promising prospect to get high TC DMS after optimizing the preparation parameters.