Utilization of flash lamp annealing for processing of low-cost TCO layers

Aluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxides (TCO) characterized by low resistivity, high transparency and most of all, by low cost of fabrication. AZO thin-films were deposited on p-type Si wafers via r.f. magnetron sputtering either at room temperature or at 400 oC and subsequently annealed in the millisecond-range, utilizing flash lamp annealing (FLA). Here, we have investigated the influence of the deposition parameters and post-deposition FLA treatment on the optoelectronic properties of the AZO layer. It is shown that the millisecond range flash lamp annealing significantly enhances the electrical activation of Al and suppresses secondary phase formation during post-deposition annealing. Moreover, the optoelectronic and microstructural properties of the FLA treated samples are independent on the deposition temperature. This, in turn opens the possibility for a further, highly-desired cost reduction of the overall fabrication process. The FLA technique is cost-effective and a high-throughput alternative for processing of AZO films.