Carbon p Electron Ferromagnetism in Silicon Carbide
Carbon p Electron Ferromagnetism in Silicon Carbide
Wang, Y.; Liu, Y.; Wang, G.; Anwand, W.; Jenkins, C.; Arenholz, E.; Munnik, F.; Gordan, O.; Salvan, G.; Zahn, D. R. T.; Chen, X.; Gemming, S.; Helm, M.; Zhou, S.
Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials, when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.
Keywords: SiC; Defect induced magnetism; XMCD
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- P-ELBE
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 21554) publication
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21554) publication
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Scientific Reports 5(2015), 8999
DOI: 10.1038/srep08999
Cited 41 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21554