Effect of ion dose and annealing mode on the photoluminescence from SiO₂-layers implanted with Si-ions

Effect of ion dose and annealing mode on the photoluminescence from SiO₂-layers implanted with Si-ions

Kachurin, G. A.; Leier, A. F.; Zhuravlev, K. S.; Tyschenko, I. E.; Gutakovsky, A. K.; Volodin, V. A.; Yankov, R. A.; Skorupa, W.

• Phys. Techn. Semiconductors (in Russian) 32 (1998) 1371
• Lecture (Conference)
  11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998

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