Theoretical description of high-temperature implantation of 6H-SiC with N⁺-and Al⁺-ions

Theoretical description of high-temperature implantation of 6H-SiC with N⁺-and Al⁺-ions

Kulikov, D. V.; Trushin, Y. V.; Yankov, R. A.; Pezoldt, J.; Skorupa, W.

• Techn. Phys. Lett. 24 (1998) 17

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