Measuring sputtering yields of high energy heavy ions on metals

For measuring sputtering yields with MeV heavy ions only low current densities can be used in order to avoid excessive target heating. Consequently self-cleaning of the target surface during the irradiation cannot be achieved and a contamination free surface has to be maintained by means of UHV conditions. A UHV-setup including a differential pumping system has been designed and operated at a vacuum of 10^-10 mbar during experiments. Sputtered particles were collected on Si catchers and subsequently measured by two different surface analysis methods: Total Reflection X-Ray Fluorescence (TXRF), and Heavy Ion Rutherford Backscattering Spectrometry (HI-RBS). In-situ surface cleaning by 8 keV Xe ions as well as online monitoring by ERDA were found to be essential. With sufficient precautions on the surface conditions reproducible sputtering yields were obtained. First measurements for 230 MeV Au ions on Au, Zr, and Ti targets are presented.