High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
Yuan, Y.; Wang, Y.; Gao, K.; Khalid, M.; Wu, C.; Zhang, W.; Munnik, F.; Weschke, E.; Baehtz, C.; Skorupa, W.; Helm, M.; Zhou, S.
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82K for x = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal
Keywords: dilute magnetic semiconductors; InMnAs; ion implantation; pulsed laser melting; perpendicular magnetic anisotropy
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
- Rossendorf Beamline at ESRF DOI: 10.1107/S1600577520014265
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 22182) publication
- DOI: 10.1107/S1600577520014265 is cited by this (Id 22182) publication
-
Journal of Physics D: Applied Physics 48(2015), 235002
DOI: 10.1088/0022-3727/48/23/235002
Cited 18 times in Scopus -
Lecture (Conference)
IEEE intermag 2015, 11.05.2015, Beijing, China
Permalink: https://www.hzdr.de/publications/Publ-22182
