Cyclotron Resonance Spectroscopy of GaAsN in Pulsed Magnetic Fields up to 60 T with Free-Electron Laser IR Radiation

The unique combination of the high magnetic field laboratory Dresden (HLD) and the free-electron laser facility FELBE allow us to perform cyclotron resonance spectroscopy experiments with tunable, intense, coherent infrared radiation of high brilliance in the range of 4 - 250 µm in pulsed magnetic fields up to 60 T. The material system of interest is the dilute nitride GaAsN, a promising candidate for electro-optical applications, because of its band gap tunability. The incorporation of a few percent of nitrogen into GaAs enables the gradual decrease of the band gap, which is proportional to the nitrogen content. The description of the band structure and in particular of the effective mass are still challenging despite the number of experimental works (e.g. [1, 2]) that have been performed on this system. In order to contribute to a clarification of this problem, we apply different investigation methods on one sample series of GaAsN with different nitrogen contents (0%; 0.1%; 0.2%).
Probably the most direct and reliable method for the investigation of the effective mass is cyclotron resonance spectroscopy, which has never been applied to bulk GaAsN layers before, according to our best knowledge. Figure 1 illustrates our CR spectroscopy investigation of three samples with different nitrogen contents illuminated with the FEL at wavelengths of 30 µm and 70 µm. These wavelengths have been chosen intentionally to investigate the effective mass behavior below and above the Reststrahlenband of GaAs. We discuss the significance of these CR studies, which were conducted using a range of temperatures, illumination wavelengths and n-type doping of the GaAsN layers. Using a simple Drude-like absorption model we deduce the electron CR mass, the electron mobility, the density of free carriers and the electron relaxation time.

References
[1] F. Masia et al., Phys. Rev. B 73, 07320 (2006).
[2] K. Alberi et al., Phys. Rev. Lett. 110, 156405 (2013).