Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Shallow, Boron (B)-doped p⁺ emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9x10¹⁹ cm^-3 and 3x10²⁰ cm^-3, and exhibit sheet resistances between 70 and 3000 Ohm/Square. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding approximately 93 J/cm² irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.