Dilute ferromagnetic InMnP

We have synthesized a new magnetic semiconductor,InMnP, by Mn ion implantation and pulsed laser annealing [1, 2]. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impurity band of the heavily doped InMnP (8 %). Our results suggest that impurity band conduction is a characteristic of Mn‐doped InP and GaP which have deep Mn‐ cceptor levels. [1] M. Khalid, et al., Phys. Rev. B 89, 121301(R) (2014) [2] M. Khalid, et al., J. Appl. Phys. 117, 043906 (2015).