Linear magnetoresistance in mosaic-like bilayer graphene
Linear magnetoresistance in mosaic-like bilayer graphene
Kisslinger, F.; Ott, C.; Heide, C.; Kampert, E.; Butz, B.; Spiecker, E.; Shallcross, S.; Weber, H. B.
The magnetoresistance of conductors usually has a quadratic dependence on magnetic field, however, examples exist of non-saturating linear behaviour in diverse materials. Assigning a specific microscopic mechanism to this unusual phenomenon is obscured by the co-occurrence and interplay of doping, mobility fluctuations and a polycrystalline structure. Bilayer graphene has virtually no doping fluctuations, yet provides a built-in mosaic tiling due to the dense network of partial dislocations. We present magnetotransport measurements of epitaxial bilayer graphene that exhibits a strong and reproducible linear magnetoresistance that persists to B = 62 T at and above room temperature, decorated by quantum interference effects at low temperatures. Partial dislocations thus have a profound impact on the transport properties in bilayer graphene, a system that is frequently assumed to be dislocation-free. It further provides a clear and tractable model system for studying the unusual properties of mosaic conductors.
Involved research facilities
- High Magnetic Field Laboratory (HLD)
-
Nature Physics 11(2015), 650-653
DOI: 10.1038/NPHYS3368
Cited 92 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-22346