Ion implantation of the 4H SiC epitaxial layers and substrates with 2MeV Se+ and 1MeV Al+ ions

The implantations were performed in 4H silicon carbide homoepitaxial layers deposited on (00.1) substrates with 8° offcut, and reference 4H-SiC substrates. The 2MeV Se+ ions and 1MeV Al+ ions were implanted with four fluences subsequently increased by the factor of 4-5×. The samples were studied by means of X-ray diffraction topography, high-resolution diffractometry, specular X-ray reflectometry, and Rutherford backscattering spectrometry\channeling method. The dislocation density in the samples evaluated from the diffraction topographs did not exceed 5×103cm-2. The representative roughness values evaluated from the reflectometric measurements was 2.3±0.1nm for the substrates and less than 1.4±0.1nm for the epitaxial layers. A significantly higher damage level in the case of 2MeV Se+ ions in comparison with 1MeV Al+ ion and a linear increase of the strain with the fluence was indicated, but the highest doses of selenium ions caused the amorphization of the implanted layer. It was also possible to obtain a good fitting of the theoretical and experimental diffraction curves approximating the strain profiles by the distribution of the point defects calculated with the SRIM 2008 code. It was confirmed that the maximum coming from surface damages observed in channeling spectra of the virgin substrate wafers was significantly higher than in the case of epitaxial layers.