Superparamagnetic behavior of Fe doped InAs prepared by ion implantation and pulsed laser annealing

Dilute magnetic semiconductors (DMSs) attracted great interests in the last several decades because of their potential for spintronic device [1]. III-V compounds especially GaAs based DMS has recently emerged as the most popular material for this new technology. However, that the low mobility of holes in p-type DMS limits the potential application in semiconductor spintronic devices. Therefore, the searching for n-type DMS is of interest.

The doping of Fe in InAs is attracting research attentions due to the possibility to fabricate n-type diluted magnetic semiconductors [2, 3]. However, the low solubility of Fe in InAs is the most difficulty to achieve InFeAs DMS. In this work, we obtain Fe doped InAs layers by ion implantation and pulsed laser annealing. This approach has shown success for preparing other III-V based DMSs [4, 5]. The formed InFeAs layers are proved to be epitaxial-like on InAs substrates. The prepared InFeAs layers reveal similar magnetic properties independent of their conductivity types. While the samples are lacking of charactersistics of DMS, they appear to be superparamagnetic behavior, revealing such as time-dependent magnetiszation measurements reveal aging and memory effects.

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