Modeling high temperature co-implantation of N⁺-and Al⁺-ions into SiC: the effects of stress on the implant and damage distributions

Modeling high temperature co-implantation of N⁺-and Al⁺-ions into SiC: the effects of stress on the implant and damage distributions

Kulikov, A. V.; Trushin, Y. V.; Yankov, R. A.; Kreißig, U.; Fukarek, W.; Mücklich, A.; Skorupa, W.; Pezoldt, J.

• Lecture (Conference)
  E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2249