Lateral growth of Ge nanowires and GeOI via millisecond range explosive recrystallization: solid vs. liquid case

The incorporation of different functional optoelectronic elements on a single chip enables performance progress, which can overcome the downsizing limit in silicon technology. For example, the use of Ge instead of silicon as a basic material in nanoelectronics would enable faster chips containing smaller transistors. In order to improve the device performance and fully exploit the unique properties of germanium, the germanium on insulator (GeOI) structure using the ultrathin body (UTB) GeOI architecture with an active doping concentration above 6×1019 cm-3 has to be explored. Here we present a new concept for the development, optimisation and fabrication of high-mobility channel materials based on Ge using plasma enhanced chemical vapour deposition of Ge and its recrystallization via millisecond range lateral explosive epitaxy. It is shown that the mechanism of explosive recrystallization (solid vs liquid) can be controlled by Sn co-doping and/or varying the annealing time. An influence of the explosive recrystallization and co-doping of Sn on the dopant activation efficiency and the carrier distribution in the ultra-thin GeOI and Ge NWs after millisecond range flash lamp annealing is discussed. Finally, the nanowire FETs will be presented. - See more at: http://www.european-mrs.com/2015-spring-symposium-z-european-materials-research-society#sthash.fI9UKy1b.dpuf